发明名称 METHOD, APPARATUS, AND SYSTEM FOR IMPROVED READ OPERATION IN MEMORY
摘要 Various embodiments include methods, apparatus, and systems for reading an adjacent cell of a memory array in an electronic device to determine a threshold voltage value of the adjacent cell, the adjacent cell being adjacent a target cell, and reading the target cell of the memory array using a wordline voltage value based on the threshold voltage value of the adjacent cell. Additional apparatus, systems, and methods are described.
申请公布号 US2013272064(A1) 申请公布日期 2013.10.17
申请号 US201313915255 申请日期 2013.06.11
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C16/34 主分类号 G11C16/34
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