发明名称 Image Sensor Manufacturing Methods
摘要 Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.
申请公布号 US2013273686(A1) 申请公布日期 2013.10.17
申请号 US201213445766 申请日期 2012.04.12
申请人 CHENG MU-HAN;WEI KUO-HSIU;CHEN KEI-WEI;WANG YING-LANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHENG MU-HAN;WEI KUO-HSIU;CHEN KEI-WEI;WANG YING-LANG
分类号 H01L31/0232;H01L21/28 主分类号 H01L31/0232
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