发明名称 |
Image Sensor Manufacturing Methods |
摘要 |
Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.
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申请公布号 |
US2013273686(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201213445766 |
申请日期 |
2012.04.12 |
申请人 |
CHENG MU-HAN;WEI KUO-HSIU;CHEN KEI-WEI;WANG YING-LANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG MU-HAN;WEI KUO-HSIU;CHEN KEI-WEI;WANG YING-LANG |
分类号 |
H01L31/0232;H01L21/28 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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