| 摘要 |
The objective of the present invention is to provide a plasma CVD apparatus capable of improving the speed of carbon film deposition onto a substrate to be processed, decreasing the cleaning frequency by reducing deposition on members other than the substrate to be processed, and being manufactured inexpensively. One embodiment of the present invention is a CVD apparatus including a vacuum vessel, magnetic-field producing means for producing a magnetic field inside the vacuum vessel, plasma producing means for producing a plasma inside the vacuum vessel, and a substrate holder configured to hold a substrate inside the vacuum vessel, and the plasma producing means has an electrode provided inside the substrate holder and a power source configured to apply voltage to the electrode.
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