SYSTEM AND METHODS FOR WIRE BONDING

摘要

A semiconductor package comprises a bond pad formed on a first semiconductor die, a surface of the bond pad exposed through an opening in a passivation layer on the first semiconductor die; a raised conductive area formed on top of a passivation layer on a second semiconductor die; and a bond wire having a first end coupled to the bond pad via a ball bond and a second end coupled directly to a surface of the raised conductive area via a stitch bond. The raised conductive area is comprised of a plurality of metal layers, each of the metal layers comprised of a respective material and having a respective thickness. The thickness and material of at least one of the plurality of metal layers is selected such that a hardness of the raised conductive area is at least as hard as a hardness of the bond wire.