发明名称 LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS
摘要 A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed.
申请公布号 US2013270514(A1) 申请公布日期 2013.10.17
申请号 US201213447915 申请日期 2012.04.16
申请人 SAXLER ADAM WILLIAM 发明人 SAXLER ADAM WILLIAM
分类号 H01L33/06;H01L29/38 主分类号 H01L33/06
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