System for frequency conversion and semiconductor component

摘要

The component (200) has semiconductor layers epitaxially formed onto a semiconductor substrate layer (201) and comprising an active zone (203) and a waveguide layer (202). An entrance facet and an exit facet are laterally located with respect to the zone. The zone is designed to absorb pumped optical radiation of a wavelength by multi-photon absorption and to generate an optical radiation of another wavelength that is shorter than the former wavelength. The zone comprises a quantum well (205) surrounded by barriers (206), which have a wider band gap than that of the quantum well. Independent claims are also included for the following: (1) a frequency conversion system (2) a method for operating a semiconductor component (3) a method for manufacturing a semiconductor component.