| 摘要 |
<p>An embedded flash memory cell and a corresponding method for fabricating the embedded flash memory cell are disclosed. The flash memory cell (210) comprises a floating gate (230) that has been formed using a metal gate and local interconnect metal, and a select gate (235) comprising metal. The embedded flash memory can be fabricated with little-to-no additional processes than what one would normally employ in fabricating a metal-oxide semiconductor field-effect transistor (MOSFET, 205).
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