发明名称 |
METHOD FOR AN IMPROVED DEVELOPING PROCESS IN WAFER PHOTOLITHOGRAPHY |
摘要 |
<p>Methods and apparatus are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. A method for achieving a more uniform, quasi-equilibrium succession of states from the introduction of developer chemical to the wafer surface to its removal is also described. The method reduces process-induced defects and improves critical dimension (CD) control.</p> |
申请公布号 |
EP1303794(B1) |
申请公布日期 |
2013.10.16 |
申请号 |
EP20010954972 |
申请日期 |
2001.07.25 |
申请人 |
ASML HOLDING N.V. |
发明人 |
PARK, JAE, HEON;BANG, JUNG, SUK |
分类号 |
G03F7/30;H01L21/027 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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