发明名称 METHOD FOR AN IMPROVED DEVELOPING PROCESS IN WAFER PHOTOLITHOGRAPHY
摘要 <p>Methods and apparatus are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. A method for achieving a more uniform, quasi-equilibrium succession of states from the introduction of developer chemical to the wafer surface to its removal is also described. The method reduces process-induced defects and improves critical dimension (CD) control.</p>
申请公布号 EP1303794(B1) 申请公布日期 2013.10.16
申请号 EP20010954972 申请日期 2001.07.25
申请人 ASML HOLDING N.V. 发明人 PARK, JAE, HEON;BANG, JUNG, SUK
分类号 G03F7/30;H01L21/027 主分类号 G03F7/30
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