发明名称 PROCESS FOR PRODUCTION OF MULTICRYSTALLINE SILICON INGOTS BY INDUCTION METHOD
摘要 <p>A process for the production of multicrystalline silicon ingots by the induction method comprises charging a silicon raw material into the melting chamber of a cooled crucible enveloped by an inductor, forming a melt surface, and melting, wherein the mass rate of charging the silicon raw material and the speed of pulling the ingot are set such that provide for the melt surface position below the upper plane of the inductor but not lower than⅓of the height thereof and the melt surface is kept at the same level. In doing this the melt surface position is kept at the same level by maintaining one of the output parameters of the inductor feed within a predetermined range. The process provides for casting multicrystalline silicon ingots suitable for solar cell fabrication and it is notable for higher efficiency and lower specific energy consumption.</p>
申请公布号 EP2470693(B1) 申请公布日期 2013.10.16
申请号 EP20100760133 申请日期 2010.08.20
申请人 BSB COOEPERATIEVE U.A. 发明人 BERINGOV, SERGII;ONISCHENKO,VOLODYMYR;SHKULKOV, ANATOLY;CHERPAK, YURIY;POZIGUN, SERGII;MARCHENKO, STEPAN;SHEVCHUK, ANDRII
分类号 C30B11/00;C30B11/04;C30B29/06 主分类号 C30B11/00
代理机构 代理人
主权项
地址