发明名称 |
Process for producing a dense, self-sintered silicon carbide/carbon-graphite composite |
摘要 |
<p>A process for producing a dense, self-sintered silicon carbide/carbon-graphite composite material is disclosed. The process for producing the composite material comprises the steps of: (a) providing a particulate mixture comprising: (i) carbon-bonded graphite of between 2 and 30 percent by weight of the mixture, the carbon-bonded graphite comprising at least 5 percent by weight carbon-precursor binder, the balance being graphite, (ii) between 1 and 10 percent by weight of a binder, (iii) between 0,1 and 15 percent of a sintering aid, (iv) between 1 and 5 percent by weight of a lubricant, and (v) the balance being silicon carbide; and (b) shaping the mixture to form a green body; (c) heating the green body in a non-oxidising atmosphere at a carbonizing temperature above 371 DEG (700 DEG F) to carbonize the binder; and (d) sintering the carbonized body at a temperature ranging from 1900 DEG C to 2300 DEG C in a substantially inert atmosphere at or below atmospheric pressure to produce a sintered body having a density of at least 80 percent of theoretical and a microstructure in which the average grain size of the carbon-graphite is larger than the average grain size of the silicon carbide. <IMAGE></p> |
申请公布号 |
EP0906896(B2) |
申请公布日期 |
2013.10.16 |
申请号 |
EP19980203777 |
申请日期 |
1994.02.04 |
申请人 |
THE MORGAN CRUCIBLE COMPANY PLC |
发明人 |
PFAFF, MARK E.;CHEN, XIN E. |
分类号 |
C04B35/52;C04B35/532;C04B35/56;C04B35/565;C04B35/626;C04B38/06;C04B41/50;F27B9/04;F27B9/10;F27D1/00 |
主分类号 |
C04B35/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|