发明名称 Process for producing a dense, self-sintered silicon carbide/carbon-graphite composite
摘要 <p>A process for producing a dense, self-sintered silicon carbide/carbon-graphite composite material is disclosed. The process for producing the composite material comprises the steps of: (a) providing a particulate mixture comprising: (i) carbon-bonded graphite of between 2 and 30 percent by weight of the mixture, the carbon-bonded graphite comprising at least 5 percent by weight carbon-precursor binder, the balance being graphite, (ii) between 1 and 10 percent by weight of a binder, (iii) between 0,1 and 15 percent of a sintering aid, (iv) between 1 and 5 percent by weight of a lubricant, and (v) the balance being silicon carbide; and (b) shaping the mixture to form a green body; (c) heating the green body in a non-oxidising atmosphere at a carbonizing temperature above 371 DEG (700 DEG F) to carbonize the binder; and (d) sintering the carbonized body at a temperature ranging from 1900 DEG C to 2300 DEG C in a substantially inert atmosphere at or below atmospheric pressure to produce a sintered body having a density of at least 80 percent of theoretical and a microstructure in which the average grain size of the carbon-graphite is larger than the average grain size of the silicon carbide. <IMAGE></p>
申请公布号 EP0906896(B2) 申请公布日期 2013.10.16
申请号 EP19980203777 申请日期 1994.02.04
申请人 THE MORGAN CRUCIBLE COMPANY PLC 发明人 PFAFF, MARK E.;CHEN, XIN E.
分类号 C04B35/52;C04B35/532;C04B35/56;C04B35/565;C04B35/626;C04B38/06;C04B41/50;F27B9/04;F27B9/10;F27D1/00 主分类号 C04B35/52
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