<p>PURPOSE: A plasma processing device is provided to effectively process materials by obtaining time for generating reaction in plasma discharge space. CONSTITUTION: A reactor (30) discharges materials through an outlet (44) by receiving the materials through an inlet (42). A first and a second electrode unit (52, 54) are individually installed according to the processing channel of a tornado shape from the inlet to the outlet in the reactor. The first and the second electrode unit supplies the high voltage of a predetermined period for generating plasma discharge reaction in a processing channel in which a process target material and process gas are inserted.</p>
申请公布号
KR20130113664(A)
申请公布日期
2013.10.16
申请号
KR20120036015
申请日期
2012.04.06
申请人
CHEORWON PLASMA RESEARCH INSTITUTE
发明人
STEVEN KIM;KIM, YONG DUK;SON, BYUNG GOO;CHOI, SUN YONG;SHIN, MYOUNG SUN;KIM, BYUNG HOON;LEE, KYU HANG;LEE, MOON WON