发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>PURPOSE: A plasma processing device is provided to effectively process materials by obtaining time for generating reaction in plasma discharge space. CONSTITUTION: A reactor (30) discharges materials through an outlet (44) by receiving the materials through an inlet (42). A first and a second electrode unit (52, 54) are individually installed according to the processing channel of a tornado shape from the inlet to the outlet in the reactor. The first and the second electrode unit supplies the high voltage of a predetermined period for generating plasma discharge reaction in a processing channel in which a process target material and process gas are inserted.</p>
申请公布号 KR20130113664(A) 申请公布日期 2013.10.16
申请号 KR20120036015 申请日期 2012.04.06
申请人 CHEORWON PLASMA RESEARCH INSTITUTE 发明人 STEVEN KIM;KIM, YONG DUK;SON, BYUNG GOO;CHOI, SUN YONG;SHIN, MYOUNG SUN;KIM, BYUNG HOON;LEE, KYU HANG;LEE, MOON WON
分类号 H05H1/46;C01B31/02;C23C16/50 主分类号 H05H1/46
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