发明名称
摘要 PROBLEM TO BE SOLVED: To reduce influence of capacitance parasitic on each part of a light emitting device. SOLUTION: A unit element P comprises: a light emitting element E in which a light emitting layer 23 intervenes between a first electrode 21 and a second electrode 22; a driving transistor Tdr for controlling the amount of electric current supplied to the light emitting element E; a capacitance element C1 electrically connected to a gate electrode of the driving transistor Tdr; a selection transistor Tsl for setting potential of the gate electrode of the driving transistor Tdr in accordance with data signals; and an initializing transistor Tint for controlling connection between the gate electrode of the driving transistor Tdr and a drain electrode. The first electrode 21 overlaps the capacitance element C1 and, on the one hand, the first electrode 21 does not overlap the selection transistor Tsl or the initializing transistor Tint. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5316659(B2) 申请公布日期 2013.10.16
申请号 JP20120027007 申请日期 2012.02.10
申请人 发明人
分类号 G09F9/30;H01L27/32;H01L51/50;H05B33/12;H05B33/22;H05B33/26 主分类号 G09F9/30
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