| 摘要 |
A silicon wafer is coated on one major surface with a layer of a silicon oxide. The silicon wafer surface has average pyramid angle roughness equal to or greater than 10°. The silicon oxide coating layer has a thickness of 100 to 1000nm and is non-conformal, so that the surface of the coating on the wafer has average pyramid angle roughness of at least 5° lower than the average pyramid angle roughness of the silicon wafer surface. |
