发明名称 METHODS FOR PRODUCING PASSIVE COMPONENTS ON A SEMICONDUCTOR SUBSTRATE
摘要 <p>Methods are specified for producing passive components on a substrate, which methods permit, with a low outlay and a good yield, the production of different components, in particular high-resistance and low-resistance resistor elements and/or capacitor elements having a higher and those having a lower capacitance per unit length on a substrate. In this case, lift-off processes can largely be dispensed with, particularly in the case of critical patternings, and selective dry- and/or wet-chemical etching can be effected.</p>
申请公布号 EP1312118(B1) 申请公布日期 2013.10.16
申请号 EP20010956418 申请日期 2001.08.01
申请人 UNITED MONOLITHIC SEMICONDUCTORS GMBH 发明人 BEHAMMER, DAG
分类号 H01L27/01;H01L27/04;H01L21/822;H01L21/8222;H01L27/06 主分类号 H01L27/01
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