发明名称 |
Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device |
摘要 |
An embodiment of a method for manufacturing a power device integrated on a semiconductor substrate. The method includes photo-lithography and etching of an epitaxial layer for the formation of at least one deep trench; deposition of a dielectric layer with partial filling of the at least one trench; complete filling of the at least one trench with a layer of sacrificial material; selective etching of the dielectric layer with consequent retrocession below the layer of sacrificial material; selective etching of the layer of sacrificial material with consequent formation of an empty region within the at least one trench; and growth of a layer of gate oxide; formation of at least one gate region, of at least one buried source region, of at least one body region and of at least one source region.
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申请公布号 |
US8558305(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100974778 |
申请日期 |
2010.12.21 |
申请人 |
ZARA FABIO;STMICROELECTRONICS S.R.L. |
发明人 |
ZARA FABIO |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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