发明名称 |
Heat treatment apparatus and method for heating substrate by photo-irradiation |
摘要 |
Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
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申请公布号 |
US8559799(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20090563409 |
申请日期 |
2009.09.21 |
申请人 |
NISHIHARA HIDEO;KATO SHINICHI;DAINIPPON SCREEN MFG. CO., LTD. |
发明人 |
NISHIHARA HIDEO;KATO SHINICHI |
分类号 |
F26B19/00 |
主分类号 |
F26B19/00 |
代理机构 |
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代理人 |
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地址 |
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