发明名称 |
Magnetic memory device and magnetic random access memory |
摘要 |
A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
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申请公布号 |
US8559214(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US200913139604 |
申请日期 |
2009.12.24 |
申请人 |
FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;SUZUKI TETSUHIRO;ISHIWATA NOBUYUKI;OHSHIMA NORIKAZU;NEC CORPORATION |
发明人 |
FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;SUZUKI TETSUHIRO;ISHIWATA NOBUYUKI;OHSHIMA NORIKAZU |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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