发明名称 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR CHIP HAVING THE SAME AND STACKED SEMICONDUCTOR PACKAGE
摘要 PURPOSE: A semiconductor substrate, a semiconductor chip including the same, and a stacked semiconductor package are provided to prevent a threshold voltage shift by improving the gettering properties of metal. CONSTITUTION: A substrate body (110) includes one surface, the other surface, and a trench. The trench is formed on a device region. An active layer (120) is formed in the trench. A gettering layer (130) is formed between the active layer and the inner surface of the substrate body.
申请公布号 KR20130113032(A) 申请公布日期 2013.10.15
申请号 KR20120035278 申请日期 2012.04.05
申请人 SK HYNIX INC. 发明人 KIM, HYUN JOO;LEE, KANG WON;LEE, GYU JEI
分类号 H01L23/48;H01L23/12 主分类号 H01L23/48
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