发明名称 |
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR CHIP HAVING THE SAME AND STACKED SEMICONDUCTOR PACKAGE |
摘要 |
PURPOSE: A semiconductor substrate, a semiconductor chip including the same, and a stacked semiconductor package are provided to prevent a threshold voltage shift by improving the gettering properties of metal. CONSTITUTION: A substrate body (110) includes one surface, the other surface, and a trench. The trench is formed on a device region. An active layer (120) is formed in the trench. A gettering layer (130) is formed between the active layer and the inner surface of the substrate body. |
申请公布号 |
KR20130113032(A) |
申请公布日期 |
2013.10.15 |
申请号 |
KR20120035278 |
申请日期 |
2012.04.05 |
申请人 |
SK HYNIX INC. |
发明人 |
KIM, HYUN JOO;LEE, KANG WON;LEE, GYU JEI |
分类号 |
H01L23/48;H01L23/12 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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