发明名称 MASK FOR MAKING POLYSILICON, METHOD OF MAKING THE SAME, AND METHOD OF MAKING THIN FILM TRANSISTOR USING THE SAME
摘要 <p>A mask for making a polysilicon structure includes a transmitting area that transmits light and a blocking area that has a metal layer and a semiconductor layer deposited in an alternating manner at least once. The blocking area blocks light. The mask is subject to less thermal stress from the light (e.g., a laser beam) and therefore has a longer life span compared to a conventional mask.</p>
申请公布号 KR101316633(B1) 申请公布日期 2013.10.15
申请号 KR20040059308 申请日期 2004.07.28
申请人 发明人
分类号 G02F1/13 主分类号 G02F1/13
代理机构 代理人
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