发明名称 |
Vapor deposition methods for forming a metal-containing layer on a substrate |
摘要 |
Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
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申请公布号 |
US8557697(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100893807 |
申请日期 |
2010.09.29 |
申请人 |
SRINIVASAN BHASKAR;SMYTHE JOHN;MICRON TECHNOLOGY, INC. |
发明人 |
SRINIVASAN BHASKAR;SMYTHE JOHN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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