发明名称 Vapor deposition methods for forming a metal-containing layer on a substrate
摘要 Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
申请公布号 US8557697(B2) 申请公布日期 2013.10.15
申请号 US20100893807 申请日期 2010.09.29
申请人 SRINIVASAN BHASKAR;SMYTHE JOHN;MICRON TECHNOLOGY, INC. 发明人 SRINIVASAN BHASKAR;SMYTHE JOHN
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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