发明名称 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
摘要 |
A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
|
申请公布号 |
US8558332(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201113041226 |
申请日期 |
2011.03.04 |
申请人 |
SUN JONATHAN ZANHONG;ALLENSPACH ROLF;PARKIN STUART STEPHEN PAPWORTH;SLONCZEWSKI JOHN CASIMIR;TERRIS BRUCE DAVID;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SUN JONATHAN ZANHONG;ALLENSPACH ROLF;PARKIN STUART STEPHEN PAPWORTH;SLONCZEWSKI JOHN CASIMIR;TERRIS BRUCE DAVID |
分类号 |
H01L29/82;G11C11/16;H01F10/32;H01F41/30;H01L21/8246;H01L27/22;H01L29/76;H01L43/08 |
主分类号 |
H01L29/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|