发明名称 |
Ruthenium for a dielectric containing a lanthanide |
摘要 |
A gate containing ruthenium for a dielectric having an oxide containing a lanthanide and a method of fabricating such a combination gate and dielectric produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide gate may be formed on a lanthanide oxide. A ruthenium-based gate on a lanthanide oxide provides a gate structure that can effectively prevent a reaction between the gate and the lanthanide oxide.
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申请公布号 |
US8558325(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100781649 |
申请日期 |
2010.05.17 |
申请人 |
AHN KIE Y.;FORBES LEONARD;MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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