发明名称 |
Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof |
摘要 |
A transistor includes a gate electrode disposed over a substrate. At least one composite strain structure is disposed adjacent to a channel below the gate electrode. The at least one composite strain structure includes a first strain region within the substrate. A second strain region is disposed over the first strain region. At least a portion of the second strain region is disposed within the substrate.
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申请公布号 |
US8558289(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100795088 |
申请日期 |
2010.06.07 |
申请人 |
CHENG CHUN-FAI;SUNG HSUEH-CHANG;CHEN KUAN-YU;LIN HSIEN-HSIN;HING FUNG KA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG CHUN-FAI;SUNG HSUEH-CHANG;CHEN KUAN-YU;LIN HSIEN-HSIN;HING FUNG KA |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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