发明名称 |
Non-planar device having uniaxially strained semiconductor body and method of making same |
摘要 |
A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.
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申请公布号 |
US8558279(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100924232 |
申请日期 |
2010.09.23 |
申请人 |
CEA STEPHEN M.;KOTLYAR ROZA;KAVALIEROS JACK T.;GILES MARTIN D.;GHANI TAHIR;KUHN KELIN J.;KUHN MARKUS;ZELICK NANCY M.;INTEL CORPORATION |
发明人 |
CEA STEPHEN M.;KOTLYAR ROZA;KAVALIEROS JACK T.;GILES MARTIN D.;GHANI TAHIR;KUHN KELIN J.;KUHN MARKUS;ZELICK NANCY M. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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