发明名称 |
Light emitting diode using semiconductor nanowire and method of fabricating the same |
摘要 |
Provided are a light emitting diode (LED) using a Si nanowire as an emission device and a method of fabricating the same. The LED includes: a semiconductor substrate; first and second semiconductor protrusions disposed on the semiconductor substrate to face each other; a semiconductor nanowire suspended between the first and second semiconductor protrusions; and first and second electrodes disposed on the first and second protrusions, respectively.
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申请公布号 |
US8558256(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20070976011 |
申请日期 |
2007.10.19 |
申请人 |
HONG KI-HA;JIN YOUNG-GU;SHIN JAI-KWANG;PARK SUNG-IL;KIM JONG-SEOB;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG KI-HA;JIN YOUNG-GU;SHIN JAI-KWANG;PARK SUNG-IL;KIM JONG-SEOB |
分类号 |
H01L33/00;H01L33/06;H01L33/34 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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地址 |
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