发明名称 |
Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system |
摘要 |
A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer adjacent to the active layer. The active layer may include a first quantum well layer, a second quantum well layer and a barrier layer between the first quantum well layer and the second quantum well layer. The first quantum well layer may include a first plurality of sub-barrier layers and a first plurality of sub-quantum well layers, and the second quantum well layer may include a second plurality of sub-barrier layers and a second plurality of sub-quantum well layers. A bandgap of the first quantum well layer may be different than a bandgap of the second quantum well layer.
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申请公布号 |
US8558215(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100883314 |
申请日期 |
2010.09.16 |
申请人 |
SON HYO KUN;LG INNOTEK CO., LTD. |
发明人 |
SON HYO KUN |
分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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