发明名称 |
Memory cells having-multi-portion data storage region |
摘要 |
Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.
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申请公布号 |
US8558209(B1) |
申请公布日期 |
2013.10.15 |
申请号 |
US201213464934 |
申请日期 |
2012.05.04 |
申请人 |
SANDHU GURTEJ S.;PANDEY SUMEET C.;MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;PANDEY SUMEET C. |
分类号 |
H01L29/02;H01L27/108;H01L29/00;H01L29/76;H01L29/94;H01L31/119;H01L47/00 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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