| 摘要 |
PURPOSE: A production method of a silica nanowire is provided to grow the silica nanowire using various substrates by heat-processing a zinc thin film at low temperatures using a plasma-enhanced chemical vapor deposition (PECVD) method. CONSTITUTION: A production method of a silica nanowire comprises the following steps: producing chemical steam of silicon and oxygen using a PECVD method; and heat processing a zinc thin film (2) coated on a substrate (1) at 200-420°C under the presence of the chemical steam. The PECVD method is conducted under the presence of mixed gas containing SiH4 gas and N2O gas. The flowing speed of the SiH4 gas is 100-300 sccm, and the flowing speed of the N2O gas is 10-500 sccm. The mixed gas contains the SiH4 gas and the N2O gas in a volume ratio of 1:0.03-2.5. |
