| 发明名称 |
Multi-transistor non-volatile memory element |
| 摘要 |
The present disclosure provides a multi-transistor element including a substrate, a first floating gate disposed on the substrate, a second floating gate disposed on the substrate and coupled to the first floating gate, and a first active region disposed in the substrate and coupled to the first and second floating gates.
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| 申请公布号 |
US8557658(B2) |
申请公布日期 |
2013.10.15 |
| 申请号 |
US201113195310 |
申请日期 |
2011.08.01 |
| 申请人 |
WANG SHIH WEI;LIN CHUN JUANG;TAIWAN SEMICONDUCTOR MANUFACTING COMPANY, LTD. |
发明人 |
WANG SHIH WEI;LIN CHUN JUANG |
| 分类号 |
H01L21/336;H01L21/3205;H01L21/4763;H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/336 |
| 代理机构 |
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