| 发明名称 |
Method for controlling structure height |
| 摘要 |
Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.
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| 申请公布号 |
US8557649(B2) |
申请公布日期 |
2013.10.15 |
| 申请号 |
US201113278301 |
申请日期 |
2011.10.21 |
| 申请人 |
VENIGALLA RAJASEKHAR;AQUILINO MICHAEL VINCENT;AMINPUR MASSUD A.;BELYANSKY MICHAEL P.;KWON UNOH;SHERAW CHRISTOPHER DUNCAN;YANG DAEWON;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
VENIGALLA RAJASEKHAR;AQUILINO MICHAEL VINCENT;AMINPUR MASSUD A.;BELYANSKY MICHAEL P.;KWON UNOH;SHERAW CHRISTOPHER DUNCAN;YANG DAEWON |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
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