发明名称 |
Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same |
摘要 |
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
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申请公布号 |
US8557627(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201313752310 |
申请日期 |
2013.01.28 |
申请人 |
OH JIN-HO;PARK JEONG-HEE;KANG MAN-SUG;CHOI BYOUNG-DEOG;OH GYU-HWAN;PARK HYE-YOUNG;PARK DOO-HWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH JIN-HO;PARK JEONG-HEE;KANG MAN-SUG;CHOI BYOUNG-DEOG;OH GYU-HWAN;PARK HYE-YOUNG;PARK DOO-HWAN |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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