发明名称 |
Method for fabricating micro and nanostructures in a material |
摘要 |
A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
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申请公布号 |
US8557612(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100824128 |
申请日期 |
2010.06.25 |
申请人 |
HENRY MICHAEL DAVID;SHEARN MICHAEL;SCHERER AXEL;CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
HENRY MICHAEL DAVID;SHEARN MICHAEL;SCHERER AXEL |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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