发明名称 Method for fabricating micro and nanostructures in a material
摘要 A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
申请公布号 US8557612(B2) 申请公布日期 2013.10.15
申请号 US20100824128 申请日期 2010.06.25
申请人 HENRY MICHAEL DAVID;SHEARN MICHAEL;SCHERER AXEL;CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 HENRY MICHAEL DAVID;SHEARN MICHAEL;SCHERER AXEL
分类号 H01L21/00 主分类号 H01L21/00
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