发明名称 Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor
摘要 The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated.
申请公布号 US8558608(B2) 申请公布日期 2013.10.15
申请号 US201213559218 申请日期 2012.07.26
申请人 CHOI JUNG-HYUN;FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 CHOI JUNG-HYUN
分类号 H01L25/00 主分类号 H01L25/00
代理机构 代理人
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