发明名称 |
Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum |
摘要 |
A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
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申请公布号 |
US8557094(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20070689720 |
申请日期 |
2007.03.22 |
申请人 |
TANG XIANMIN;CHUNG HUA;WANG RONGJUN;GUNG TZA-JING;GOPALRAJA PRABURAM;YU JICK;YANG HONG;APPLIED MATERIALS, INC. |
发明人 |
TANG XIANMIN;CHUNG HUA;WANG RONGJUN;GUNG TZA-JING;GOPALRAJA PRABURAM;YU JICK;YANG HONG |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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地址 |
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