发明名称 |
Semiconductor device with dual metal silicide regions and methods of making same |
摘要 |
Disclosed herein are various semiconductor devices with dual metal silicide regions and to various methods of making such devices. In one example, the device includes a gate electrode and a plurality of source/drain regions formed in a substrate proximate the gate electrode structure. The device further includes a first metal silicide region formed in each of the source/drain regions, wherein the first metal silicide region has an inner boundary and a second metal silicide region formed in each of the source/drain regions, wherein the second metal silicide region is positioned laterally between the inner boundary of the first metal silicide region and an edge of the gate electrode structure.
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申请公布号 |
US8558290(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201113217975 |
申请日期 |
2011.08.25 |
申请人 |
SCHEIPER THILO;FLACHOWSKY STEFAN;GLOBALFOUNDRIES INC. |
发明人 |
SCHEIPER THILO;FLACHOWSKY STEFAN |
分类号 |
H01L21/82;H01L21/76;H01L23/051;H01L29/10;H01L29/66;H01L29/76 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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