发明名称 |
Active matrix display device |
摘要 |
A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
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申请公布号 |
US8558453(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20080331679 |
申请日期 |
2008.12.10 |
申请人 |
SAKAKURA MASAYUKI;NODA TAKESHI;KUWABARA HIDEAKI;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAKAKURA MASAYUKI;NODA TAKESHI;KUWABARA HIDEAKI;YAMAZAKI SHUNPEI |
分类号 |
H01L51/52;C23C14/24;H01L51/50;H05B33/10 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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