发明名称 |
Semiconductor photodetector structure and the fabrication method thereof |
摘要 |
A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.
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申请公布号 |
US8558336(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20090542671 |
申请日期 |
2009.08.17 |
申请人 |
SU TZUNG-I;LAN BANG-CHIANG;SU CHAO-AN;WU HUI-MIN;WANG MING-I;HUANG CHIEN-HSIN;TAN TZUNG-HAN;CHEN MIN;LIN MENG-JIA;SU WEN-YU;UNITED MICROELECTRONICS CORP. |
发明人 |
SU TZUNG-I;LAN BANG-CHIANG;SU CHAO-AN;WU HUI-MIN;WANG MING-I;HUANG CHIEN-HSIN;TAN TZUNG-HAN;CHEN MIN;LIN MENG-JIA;SU WEN-YU |
分类号 |
H01L31/0232;H01L31/08;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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