发明名称 |
Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
摘要 |
A low voltage transient voltage suppressing (TVS) device supported on a semiconductor substrate supporting an epitaxial layer thereon. The TVS device further includes a bottom-source metal oxide semiconductor field effect transistor (BS-MOSFET) comprises a trench gate surrounded by a drain region encompassed in a body region disposed near a top surface of the semiconductor substrate wherein the drain region interfaces with the body region constituting a junction diode and the drain region encompassed in the body region on top of the epitaxial layer constituting a bipolar transistor with a top electrode disposed on the top surface of the semiconductor functioning as a drain/collector terminal and a bottom electrode disposed on a bottom surface of the semiconductor substrate functioning as a source/emitter electrode. The body regions further comprises a surface body contact region electrically connected to a body-to-source short-connection thus connecting the body region to the bottom electrode functioning as the source/emitter terminal. The gate may be shorted to the drain for configuring the BS-MOSFET transistor into a two terminal device with a gate-to-source voltage equal to a drain-to-source voltage. The drain/collector/cathode terminal disposed on top of the trench gate turns on the BS-MOSFET upon application of a threshold voltage of the BS-MOSFET thus triggering the bipolar transistor for clamping and suppressing a transient voltage substantially near a threshold voltage of the BS-MOSFET.
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申请公布号 |
US8558276(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20090456555 |
申请日期 |
2009.06.17 |
申请人 |
BOBDE MADHUR;ALPHA AND OMEGA SEMICONDUCTOR, INC. |
发明人 |
BOBDE MADHUR |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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