发明名称 |
Semiconductor device and method of forming the same |
摘要 |
A semiconductor device includes a semiconductor substrate having a groove; a gate insulator; a first diffusion region; a gate electrode; a hydrogen-containing insulator; and a fluorine-containing insulator. The gate insulator covers inside surfaces of the groove. The first diffusion region is formed in the substrate. The first diffusion region has a first contact surface that contacts the gate insulator. The gate electrode is formed on the gate insulator and in the groove. The hydrogen-containing insulator is formed over the gate electrode and in the groove. The hydrogen-containing insulator is adjacent to the gate insulator. The fluorine-containing insulator is formed on the hydrogen-containing insulator and in the groove. The first contact surface includes Si-H bonds and Si-F bonds.
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申请公布号 |
US8558298(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201213432614 |
申请日期 |
2012.03.28 |
申请人 |
SHINHARA TAKASHI;ELPIDA MEMORY, INC. |
发明人 |
SHINHARA TAKASHI |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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