发明名称 Semiconductor device and method of forming the same
摘要 A semiconductor device includes a semiconductor substrate having a groove; a gate insulator; a first diffusion region; a gate electrode; a hydrogen-containing insulator; and a fluorine-containing insulator. The gate insulator covers inside surfaces of the groove. The first diffusion region is formed in the substrate. The first diffusion region has a first contact surface that contacts the gate insulator. The gate electrode is formed on the gate insulator and in the groove. The hydrogen-containing insulator is formed over the gate electrode and in the groove. The hydrogen-containing insulator is adjacent to the gate insulator. The fluorine-containing insulator is formed on the hydrogen-containing insulator and in the groove. The first contact surface includes Si-H bonds and Si-F bonds.
申请公布号 US8558298(B2) 申请公布日期 2013.10.15
申请号 US201213432614 申请日期 2012.03.28
申请人 SHINHARA TAKASHI;ELPIDA MEMORY, INC. 发明人 SHINHARA TAKASHI
分类号 H01L27/108 主分类号 H01L27/108
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