发明名称 PLASMA PROCESSING APPARATUS AND METHOD
摘要 PURPOSE: A plasma processing apparatus and a plasma processing method are provided to prevent a substrate from being contaminated due to byproducts of a side space by limiting a plasma generating space using a plasma limiting member. CONSTITUTION: A chamber body(210) includes a top body(211) and a bottom body(212). A substrate support unit(220) is arranged in the chamber body and supports a substrate. A top electrode(230) is arranged in the chamber body to face the substrate support unit. A plasma limiting member(240) divides a top space between the top electrode and the substrate support unit into a plasma generating space and a side space. The plasma limiting member limits plasma in the plasma generating space and is attached to the top electrode to be electrically floated.
申请公布号 KR101317644(B1) 申请公布日期 2013.10.15
申请号 KR20110084953 申请日期 2011.08.25
申请人 发明人
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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