发明名称 |
Self-aligned metal-semiconductor alloy and metallization for sub-lithographic source and drain contacts |
摘要 |
A lateral double-gate FET structure with sub-lithographic source and drain regions is disclosed. The sub-lithographic source and drain regions are defined by a sacrificial spacer. Self-aligned metal-semiconductor alloy and metal contacts are made to the sub-lithographic source and drain using conventional silicon processing.
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申请公布号 |
US8557665(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20090611577 |
申请日期 |
2009.11.03 |
申请人 |
COHEN GUY M.;SOLOMON PAUL M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN GUY M.;SOLOMON PAUL M. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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