| 摘要 |
An x-ray detection photo diode is disclosed. The disclosed x-ray detection photo diode includes: a substrate; a first electrode formed on the substrate; a photoconductor layer formed on the first electrode in a narrower area than that of the first electrode; and a second electrode formed on the photoconductor layer. In this manner, the x-ray detection photo diode enables the electrode structure to be changed. As such, a leakage current generated in edges of the x-ray detection photo diode can be minimized. |
