发明名称 Substrate processing apparatus
摘要 PURPOSE: A substrate processing apparatus is provided to precisely controlling internal pressure inside a chamber in a wide-ranging pressure condition for processing a substrate in excellent quality. CONSTITUTION: A chamber(200) processes a substrate in a secluded state from outside. The chamber includes plural pressure gauges(201-203) measuring internal pressure inside the chamber. A susceptor(300) is installed inside the chamber to be elevated. A gas sprayer(400) sprays gas to the substrate. An exhaust system(100) exhausts the inside of the chamber. The exhaust system includes a dry pump(10), a low-vacuum exhaust line(20), a middle-vacuum exhaust line(30), a first automatic pressure control valve(31), a high-vacuum exhaust line(40), a turbo-molecule pump(41), and a second automatic pressure control valve(42).
申请公布号 KR101311283(B1) 申请公布日期 2013.10.14
申请号 KR20110137496 申请日期 2011.12.19
申请人 发明人
分类号 H01L21/02;H01L21/3065 主分类号 H01L21/02
代理机构 代理人
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