METHODS OF MANUFACTURING CRYSTALLINE-SILICON SOLAR CELLS

摘要

PURPOSE: A method for manufacturing crystalline silicon solar cells is provided to improve a filling rate by forming a third doping layer in the peripheral region of a substrate. CONSTITUTION: A crystalline silicon substrate formed by a first type impurity doping is prepared (S110). A first doping layer and a second doping layer are formed on the upper surface of the substrate (S120). A front electrode is formed in the upper part of the substrate (S130). A metal layer structure is formed in the lower central region of the substrate (S140). A third doping layer is formed on the lower surface of the substrate (S150). [Reference numerals] (AA) Start; (BB) End; (S110) Crystalline silicon substrate formed by doping a first type impurity is prepared; (S120) First doping layer and a second doping layer are formed on the upper surface of the substrate by doping a second type impurity; (S130) Front electrode is formed; (S140) Metal layer structure is formed by placing a mask's frames on the edges and printing conductive paste; (S150) Third doping layer is formed by doping the first type impurity on the edges; (S160) Electric field-effect layer and back electrode are formed on the back by performing a heat treatment the metal layer structure