| 摘要 |
A method of manufacturing an array substrate is provided to simplify a manufacturing process and reduce the manufacturing cost by using a photoresist pattern for forming source and drain electrodes as a protection pattern used to remove an oxide layer formed on a semiconductor layer. A gate electrode(20) is formed on a substrate(10). A gate insulating layer(30) is formed on the overall surface of the substrate to cover the gate electrode. A dispersion solution having nano powder dissolved therein is dispersed on the gate insulating layer. The dispersion solution is vaporized to form a semiconductor layer(40) of the nano powder. Photoresist is coated on the substrate on which the semiconductor layer is formed and a photoresist pattern(320) for exposing a region in which source and drain electrodes are formed is formed using a mask. An oxide layer(100) formed in the exposed region is removed. |
