PLASMA PROCESS, FILM DEPOSITION METHOD AND SYSTEM USING ROTARY CHUCK

摘要

PURPOSE: A plasma process capable of reducing production costs, a film deposition method and a system using a rotary chuck are provided to reduce the non-uniformity of film thickness by rotating a wafer in a deposition process. CONSTITUTION: A chuck is formed in a plasma process chamber. A wafer is mounted on the chuck (410). Plasma is generated in the plasma process chamber. A plasma process using the plasma is performed on the wafer (420). The wafer mounted on the chuck is rotated. [Reference numerals] (410) Wafer is supported on a chuck in a plasma process chamber; (420) Plasma is formed within the plasma process chamber by rotating the chuck and wafer during a plasma process and the formed plasma is used for performing the plasma process on the wafer