| 摘要 |
PURPOSE: An electro-optical device and an electronic device are provided to enable higher definition and reduce the display size by wiring multiple scanning lines and control lines at high density. CONSTITUTION: Each element of a pixel circuit (110) is formed on a silicon substrate (150). The surface of the silicon substrate is mostly covered by N wells (160). In order to identify the area where transistors (121-125) are formed, the area where the transistors are formed and the neighboring area among the N wells are indicated by hatching. In the N wells, the electric potential is applied through an N diffusion layer and multiple P diffusion layers (P1-P9) are formed by doping ions. |
