PASSIVATING POINT DEFECTS IN HIGH-K GATE DIELECTRIC LAYERS DURING GATE STACK FORMATION

摘要

PURPOSE: A method for passivating point defects in a high-k gate dielectric layer when a gate stack is formed is provided to reduce the point defects by injecting ions of chemical elements. CONSTITUTION: A first gaseous precursor (340a) is included in an initial sublayer (330). A second gaseous precursor is not included in a material deposition cycle (340). An interfacial layer (303) is formed on a semiconductor material layer. The material deposition cycle is formed on the interfacial layer. A gaseous treatment atmosphere includes a passivating material.