发明名称 METHOD FOR MANUFACTURING BACKSIDE ILLUMINATED IMAGE SENSOR
摘要 PURPOSE: A method for manufacturing a backside illumination image sensor is provided to form a barrier layer by using a metal oxide layer, thereby preventing filling failure. CONSTITUTION: A device isolation layer (107) is formed on the front surface of a semiconductor substrate. A light receiving device is formed in the active region of the semiconductor substrate. An interlayer dielectric (117) is formed on the front surface of the semiconductor substrate. A super contact hole (119) is formed in the pad region. A barrier layer is formed on the bottom surface and the sidewall of the super contact hole.
申请公布号 KR20130112575(A) 申请公布日期 2013.10.14
申请号 KR20120035061 申请日期 2012.04.04
申请人 DONGBU HITEK CO., LTD. 发明人 JUNG, CHUNG KYUNG;JOO, SUNG WOOK
分类号 H01L27/146 主分类号 H01L27/146
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