发明名称 |
METHOD FOR MANUFACTURING BACKSIDE ILLUMINATED IMAGE SENSOR |
摘要 |
PURPOSE: A method for manufacturing a backside illumination image sensor is provided to form a barrier layer by using a metal oxide layer, thereby preventing filling failure. CONSTITUTION: A device isolation layer (107) is formed on the front surface of a semiconductor substrate. A light receiving device is formed in the active region of the semiconductor substrate. An interlayer dielectric (117) is formed on the front surface of the semiconductor substrate. A super contact hole (119) is formed in the pad region. A barrier layer is formed on the bottom surface and the sidewall of the super contact hole. |
申请公布号 |
KR20130112575(A) |
申请公布日期 |
2013.10.14 |
申请号 |
KR20120035061 |
申请日期 |
2012.04.04 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
JUNG, CHUNG KYUNG;JOO, SUNG WOOK |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|