METHOD FOR MANUFACTURING OF SEMICONDUCTOR

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce process costs by using a spin coating method for forming a dielectric layer. CONSTITUTION: A semiconductor layer is formed on a substrate. A dielectric material is formed on the semiconductor layer by a spin coating process. A spin coating layer is formed by the spin coating process (S130). Electrodes are formed on the semiconductor layer and the spin coating layer (S140). A passivation layer is formed on the semiconductor layer, the electrodes, and the spin coating layer (S150). [Reference numerals] (S110) Buffer layer is formed on a substrate; (S120) Semiconductor layer is formed on the buffer layer; (S130) Spin coating layer is formed by spin-coating an SOD material the semiconductor layer; (S140) Multiple electrodes are formed on the semiconductor layer and the spin coating layer; (S150) Passivation layer is formed on the multiple electrodes and the spin coating layer